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MIL-PRF-19500-550 Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Types 1N6304, 1N6305, 1N6306, And R Types, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/550C
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and
2071
mechanical
inspection
Subgroup 2
IFM = 70 A (pk); duty cycle ≤ 2
Forward voltage
4011
.975
V dc(pk)
VFM1
percent (pulsed, see 4.5.1) tP = 300
μs maximum
IFM = 150 A (pk); duty cycle ≤ 2
Forward voltage
4011
1.18
V dc(pk)
VFM2
percent (pulsed, see 4.5.1) tP = 300
μs maximum
μA dc
Reverse current
4016
25
DC method; VR = rated VR (see 1.3)
IR1
Subgroup 3
TC = +150°C
High temperature
operation:
Reverse current
4016
30
mA dc
DC method; VR = rated VR (see 1.3)
IR2
IFM = 70 A (pk); duty cycle ≤ 2
Forward voltage
4011
.84
V dc (pk)
VFM3
percent (pulsed, see 4.5.1) tP = 300
μs maximum
TC = -55°C
Low temperature
operation:
Breakdown voltage
4021
IR = 1 mA
V(BR)
1N6304, R
50
V dc
1N6305, R
100
V dc
1N6306, R
150
V dc
See footnote at end of table.
12



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