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MIL-PRF-19500-550 Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Types 1N6304, 1N6305, 1N6306, And R Types, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/550C
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4
Reverse recovery
4031
50
ns
Condition B; IF = 0.5 A dc, IR = 1 A
trr1
time
dc, IREC = 0.25 A dc, di/dt = 85
A/μs (minimum), (see 4.5.3 and
figure 6)
Reverse recovery
4031
60
ns
Condition C, IFM = 70 A dc,
trr2
time
di/dt = 130 A/μs (see 4.5.3 and
figure 6)
Junction capacitance
4001
600
pF
VR = 10 V, f = 1 MHz
CJ
Vsig = 50 mV (p-p) maximum
Subgroups 5 and 6
Not applicable
Subgroup 7
IFM = 1 A, tp ≥ 20 ns, tr = 8 ns
Forward recovery
4026
2.2
V(pk)
VF(Dyn)
voltage
Forward recovery
4026
15
ns
IFM = 1 A
tfr
time
1/ For sampling plan, see MIL-PRF-19500.
13



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