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MIL-PRF-19500-550 Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Types 1N6304, 1N6305, 1N6306, And R Types, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/550C
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.191 SQ
.201 SQ
4.851 SQ
5.105 SQ
B
.173 SQ
.183 SQ
4.394 SQ
4.648 SQ
C
.009
.010
0.229
0.254
B version
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. Back metal: Cr - Ni - Ag.
4. Top metal: Cr - Ni - Ag.
5. Metallization: Cr = 800 Å minimum, Ni = 1.5 Å minimum, Ag = 3,000 Å minimum.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 3. Physical dimensions JANHCB and JANKCB.
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