MIL-PRF-19500-550 Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Types 1N6304, 1N6305, 1N6306, And R Types, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/550C

Circuit A

NOTES:

1. Oscilloscope: Rise time ≤ 1 ns; input impedance = 50 ohms maximum.

2. Pulse generator: Rise time ≤ 10 ns; source impedance 50 ohms maximum.

3. Current viewing resistor: Non-inductive coaxial type with resistance matched to pulse generator

impedance. An appropriate current probe may be used in place of the C.V.R. A 50 ohm, 60 ns, charge

line may be used for the Zout.

FIGURE 6. Reverse recovery time circuit and waveform.