MIL-PRF-19500-550 Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Types 1N6304, 1N6305, 1N6306, And R Types, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/550C

3.6 Polarity. The polarity shall be indicated by a graphic symbol with the arrow pointing toward the cathode

terminal. The reversed units shall also be marked with an R following the last digit in the type number.

3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3 and table I herein.

3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and

4.4.3.

* 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

* 4.3 Screening (JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of

MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screening (see

appendix E,

Measurement

table E-IV of

MIL-PRF-19500)

JANTX and JANTXV levels

(1) 3b

Surge (see 4.3.3)

(1) 3c

Thermal response (see 4.3.4)

Not applicable

VFM1 and IR1 (2)

Burn-in (see 4.3.2)

(3) 13

Subgroup 2 of table I herein,

VFM1 and IR1; ΔVFM1 ≤ � 0.1 V (pk);

ΔIR1 ≤ � 5 μA dc or 100 percent from

the initial value, whichever is greater

(1) May be performed at any time after screen 3a. Surge shall

precede thermal response.

(2) IR1 measurement shall not be indicative of an open condition.

(3) Thermal response need not be repeated if previously screened.