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MIL-PRF-19500-554 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6392, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

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MIL-PRF-19500/554E
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
MIL-STD-750
Inspection
Sampling
plan
Method
Conditions
Subgroup 1
22 devices
c=0
100 cycles, 0° to 100°C.
Thermal shock
1056
Test condition C and H1.
Hermetic seal
1071
Electrical measurement
See table I, subgroup 2.
Subgroup 2
22 devices
c=0
Steady-state reverse
1038
Test condition A, 1,000 hours.
bias
Electrical measurements
See table I, subgroup 2.
Sample
Subgroup 4
size = N/A
See MIL-PRF-19500.
Thermal impedance
curves
Subgroup 5
Not applicable
Subgroup 10
Condition A; TA = +25°C; IFSM = 1000 A, 100 surges
Surge
4066
Electrical measurements
See table I, subgroup 2.
10



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