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MIL-PRF-19500-554 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6392, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

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MIL-PRF-19500/554E
TABLE I. Group A inspection.
MIL-STD-750
Limits
Symbol
nspection 1/
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
°C/W
Thermal impedance
3101
See 4.3.3
Forward voltage
IFM = 120 A (pk) pulsed (see 4.5.1)
VFM1
4011
0.82
V (pk)
IFM = 60 A (pk) pulsed (see 4.5.1)
VFM2
0.68
V (pk)
IFM = 10 A (pk) pulsed (see 4.5.1)
VFM3
0.51
V (pk)
2.0
mA (pk)
VRM = 45 V (pk) pulsed (see 4.5.1)
IRM1
Reverse current
4016
Subgroup 3
High temperature
operation
VRM = 45 V (pk) pulsed (see 4.5.1)
Reverse current
4016
leakage
TJ = +175°C
IRM2
200
mA (pk)
TJ = +125°C
IRM3
mA (pk)
60
TC = -55°C
Low temperature
operation
Reverse current
VRM = 45 V (pk) pulsed (see 4.5.1)
IRM4
4016
400
mA (pk)
leakage
IFM = 10 A (pk) pulsed (see 4.5.1)
VFM4
Forward voltage
4011
0.69
V (pk)
Subgroup 4
Reverse current
4016
Peak reverse energy test (see 4.5.2)
2.0
A (pk)
IRM5
leakage at peak
VRSM = 54 V (pk)
reverse voltage
(alternate test, see 4.5.4)
VR = 5 V dc; f = 100 KHz ≤ f ≤ 1 Mhz
CT
Capacitance
4001
3,000
pF
See footnote at end of table.
8



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