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MIL-PRF-19500-554 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6392, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

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MIL-PRF-19500/554E
Input pulse
Rin = 50 ohms, 1 W
VG = 10 V dc
RS = 0.1 ohms, 1 W
VCC ≈ 10 V dc
RG = 50 ohms
P.W. ≈ 30 µs
L = 260 µH
Duty cycle ≤ 1 percent
T = IRF130/2N6756 or equivalent
PROCEDURES:
1. With S open, adjust pulse width to test current of 2 A across RS.
2. Close S, verify test current with current sense.
3. Read peak output voltage (see 4.5.4).
FIGURE 4. Peak reverse energy test circuit.
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