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MIL-PRF-19500-554 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6392, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

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MIL-PRF-19500/554E
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 5
Not applicable
Subgroup 6
IFSM = 1,000 A (pk); 10 surges of 8.3 ms
Forward surge
4066
each at 1 minute intervals, superimposed
on IO = 22.5 A dc; VRWM = rated VRWM
(see 1.3); TA = +100°C.
Electrical
See table I, subgroup 2
measurements
Subgroup 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
9



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