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MIL-PRF-19500-554 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6392, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

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MIL-PRF-19500/554E
Dimensions
Inches
Millimeters
Ltr
Min
Max
Min
Max
A
.210
.220
5.38
5.46
B
.190
.210
5.03
5.08
C
.012
.013
.30
.33
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The metallization characteristics of the die are:
Anode (front)
Cathode (back)
Ag
Ag
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
* FIGURE 2. JANHCA die dimensions (A version).
3



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