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MIL-PRF-19500-556 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, And 2N6786U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/556L

TABLE I. Group A inspection.

Inspection 1/

Symbol

Limits

Unit

MIL-STD-750

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

inspection

Subgroup 2

�C/W

3161

See 4.3.3

Thermal impedance

ZθJC

Breakdown voltage,

3407

VGS = 0 V dc, ID = 1.0 mA dc,

V(BR)DSS

drain to source

bias condition C

2N6782, 2N6782U

100

V dc

2N6784, 2N6784U

200

V dc

2N6786, 2N6786U

400

V dc

VDS ≥ VGS, ID = 0.25 mA dc

Gate to source

3403

2.0

4.0

V dc

VGS(TH)1

voltage (threshold)

Gate current

3411

+100

nA dc

VGS = +20 V dc, bias condition C,

IGSSF1

VDS = 0

Gate current

3411

-100

nA dc

VGS = -20 V dc, bias condition C,

IGSSR1

VDS = 0

�A dc

Drain current

3413

VGS = 0 V dc, bias condition C,

IDSS1

VDS = 80 percent of rated VDS

Static drain to source

3421

VGS = 10 V dc, condition A,

rDS(on)1

on-state resistance

pulsed (see 4.5.1), ID = ID2

2N6782, 2N6782U

0.60

ohm

2N6784, 2N6784U

1.50

ohm

2N6786, 2N6786U

3.60

ohm

Static drain to source

3421

VGS = 10 V dc, condition A,

rDS(on)2

on-state resistance

pulsed (see 4.5.1), ID = ID1

2N6782, 2N6782U

0.61

ohm

2N6784, 2N6784U

1.60

ohm

2N6786, 2N6786U

3.70

ohm

Forward voltage

4011

Pulsed (see 4.5.1), ID = ID1,

VSD

(source drain diode)

VGS = 0 V dc

2N6782, 2N6782U

1.5

2N6784, 2N6784U

1.5

2N6786, 2N6786U

1.4

See footnotes at end of table.