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MIL-PRF-19500-556 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, And 2N6786U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/556L
* 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
B2
1051
Test condition G.
*
B3
1042
Intermittent operation life, test condition D. The heating cycle shall
be 1 minute minimum.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with the inspections of table I, subgroup 2 herein.
Subgroup
Method
Condition
C2
2036
Test condition E (Not required for LCC).
See 4.5.2, RθJC(max) = 8.33°C/W.
C5
3161
C6
1042
Intermittent operation life, test condition D, 6,000 cycles. The heating cycle shall
be 1 minute minimum.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. The thermal resistance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
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