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MIL-PRF-19500-556 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, And 2N6786U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/556L
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
TC = TJ = +125°C
High-temperature
operation:
± 200
Gate current
3411
nA dc
VGS = +20 V dc and -20 V dc,
IGSS2
bias condition C, VDS = 0
Drain current
3413
0.25
mA dc
VGS = 0 V dc, bias condition C,
IDSS2
VDS = 80 percent of rated VDS
VDS ≥ VGS, ID = 0.25 mA dc
Gate to source
3403
1.0
V dc
VGS(TH)2
voltage (thresholds)
Static drain to source
3421
VGS = 10 V dc, pulsed (see 4.5.1),
rDS(on)3
on-state resistance
ID = ID2
2N6782, 2N6782U
1.08
ohm
2N6784, 2N6784U
2.81
ohm
2N6786, 2N6786U
7.92
ohm
TC = TJ = -55°C
Low-temperature
operation:
VDS ≥ VGS, ID = 0.25 mA dc
Gate to source
3403
5.0
V dc
VGS(TH)3
voltage (threshold)
Subgroup 4
Switching time test
3472
ID = ID1, VGS = 10 V dc,
RG = 7.5Ω, VDD = 50 percent
of rated VDS
Turn-on delay time
td(on)
2N6782, 2N6782U
15
ns
2N6784, 2N6784U
15
ns
2N6786, 2N6786U
15
ns
See footnotes at end of table.
13



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