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MIL-PRF-19500-556 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, And 2N6786U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/556L
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued
Rise time
tr
2N6782, 2N6782U
25
ns
2N6784, 2N6784U
20
ns
2N6786, 2N6786U
20
ns
Turn-off delay time
td(off)
2N6782, 2N6782U
25
ns
2N6784, 2N6784U
30
ns
2N6786, 2N6786U
35
ns
Fall time
tf
2N6782, 2N6782U
20
ns
2N6784, 2N6784U
20
ns
2N6786, 2N6786U
30
ns
Subgroup 5
Single pulse unclamped
3470
See 4.3.2
Inductive switching 3/
Safe operating area
3474
See figure 7; tp = 10 ms
test
minimum, VDS = 80 percent of
maximum rated VDS, (VDS ≤
200)
Electrical measurements
See table I, subgroup 2 herein.
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
Test 1
Qg(on)
On-state gate charge
8.1
nC
2N6782, 2N6782U
8.6
nC
2N6784, 2N6784U
12
nC
2N6786, 2N6786U
See footnotes at end of table.
14



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