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MIL-PRF-19500-556 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, And 2N6786U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/556L
4.3.1 Gate stress test. Apply VGS = ±30 V minimum for t = 250 µs minimum.
*
4.3.2 Unclamped inductive switching.
a. Peak current (ID)............................................... rated ID1.
b. Peak gate voltage (VGS) .................................. 10 V.
c. Gate to source resistor (RGS)........................... 25 Ω ≤ RGS ≤ 200 Ω.
d. Initial case temperature (TC)............................. +25°C +10°C, -5°C.
e. Inductance (L) ................................................... 100 µH minimum.
*
f. Number of pulses to be applied ........................ 1 pulse minimum.
g. Pulse repetition rate .......................................... None.
4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with
method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
4.3.4 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a
minimum, die shall be 100-percent probed in accordance with table I, subgroup 2, except test current shall not
exceed 20 A.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate
flow is allowed for quality conformance inspection in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.
Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.
* 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B3
1051
Test condition G.
*
B4
1042
Intermittent operation life, test condition D. The heating cycle shall
be 1 minute minimum.
Accelerated steady-state operation life; test condition A, VDS = rated TA = +175°C,
B5
1042
t = 120 hours. Read and record V(BR)DSS (pre and post) at 1 mA = ID. Read and
record IDSS (pre and post). Deltas for V(BR)DSS shall not exceed 10 percent and
IDSS shall not exceed 25 µA.
Accelerated steady-state gate bias; condition B, VGS = rated, TA = +175°C, t = 24
hours.
B5
2037
Bond strength; test condition D.
10



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