MIL-PRF-19500/556L
* TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.
Sample
Inspection 1/
plan
Method
Conditions
Subgroup 1
45 devices
c=0
Temperature cycling
1051
Test condition G, 500 cycles
Hermetic seal
1071
Fine leak
Gross leak
Electrical measurements
See table I, subgroup 2
Subgroup 2 2/
45 devices
c=0
Steady-state reverse bias
1042
Condition A, 1,000 hours
See table I, subgroup 2
Electrical measurements
Steady-state gate bias
1042
Condition B, 1,000 hours
Electrical measurements
See table I, subgroup 2
Subgroup 4
Sample size
N/A
Thermal impedance curves
See MIL-PRF-19500.
3 devices
Subgroup 5
c=0
*
Barometric pressure
1001
Condition C, 2N6786 and 2N6786U only
Subgroup 10
22 devices
c=0
Commutating diode for safe
3476
Test conditions shall be derived by the
operating area test procedure for
manufacturer.
measuring dv/dt during reverse
recovery of power MOSFET
transistors or insulated gate
bipolar transistors
1/ JANHC and JANKC devices are qualified in accordance with MIL-PRF-19500.
2/ A separate sample may be pulled for each test.
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