MIL-PRF-19500-559 Semiconductor Device, Unitized, Npn, Silicon, Switching, Four Transistor Array, Types 2N6989, 2N6989U, And 2N6990, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors in a four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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'ﾚﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄｿﾚﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄｿ' by DLA - Page 11 of 31

MIL-PRF-19500/559K

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Measurement

Screen (see table

E-IV of

MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

Thermal impedance, method 3131 of

(1) 3c

Thermal impedance, method 3131 of

MIL-STD-750, see 4.3.2.

ICBO2, hFE4

Not applicable.

48 hours minimum.

ICBO2; hFE4;

ICBO2; hFE4.

ĆICBO2 = 100 percent of initial value or

5 nA dc, whichever is greater.

ĆhFE4 = +15 percent.

See 4.3.1.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICBO2 = 100 percent of initial value or

5 nA dc, whichever is greater;

ĆhFE4 = ｱ15 percent.

-7

Required maximum leak rate = 1 x 10

Required maximum leak rate = 1 x 10 atm

atm cc/s test condition C.

cc/s test condition C.

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135ｰC minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence

is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for

burn-in modification approval.

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed on each die in accordance

with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). See table III, group E, subgroup 4 herein. (See figures 10 through 13.)

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of tableI, group A1 and A2 inspection only (table E-VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.2).