MIL-PRF-19500-559 Semiconductor Device, Unitized, Npn, Silicon, Switching, Four Transistor Array, Types 2N6989, 2N6989U, And 2N6990, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors in a four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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'ﾚﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄｿﾚﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄﾄｿ' by DLA - Page 13 of 31

MIL-PRF-19500/559K

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)

herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with

table I, subgroup 2 and 4.5.5 herein, delta parameters apply to subgroup C6.

4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E, 3 ounce weight; three bends of 15 degrees for 2N6990; three bends for

2N6989; not applicable to 2N6989U.

1,000 hours at VCB = 10 V dc; TJ = +150ｰC min.

1026

4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Method

Condition

Subgroup

2036

Test condition E, 3 ounce weight; three bends of 15 degrees for 2N6990; three bends

for 2N6989; not applicable to 2N6989U.

RθJA, see 1.3.

3131

Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type

enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other

subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance

with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing

provided there is no adverse effect to the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified table III herein. Electrical

measurements (end-points) and delta measurements shall be in accordance with the applicable steps of table I,

subgroup 2 and 4.5.5 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except

the output capacitor shall be omitted.

4.5.3 Independent transistor inspections. Inspections shall be performed on each transistor in the array.

4.5.4 Transistor-to-transistor resistance. The leads of each transistor shall be shorted together for this test. The

resistance shall be measured between each transistor in the array.