MIL-PRF-19500-559 Semiconductor Device, Unitized, Npn, Silicon, Switching, Four Transistor Array, Types 2N6989, 2N6989U, And 2N6990, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors in a four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/559K

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and

table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and

delta requirements shall be in accordance with table I, subgroup 2 and 4.5.5 herein. See 4.4.2.2 for JAN, JANTX,

and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and

JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and 4.5.5 herein.

4.4.2.1 Group B inspection, table (JANS) E-VIa of MIL-PRF-19500.

Subgroup Method

Condition

VCB = 10 V dc, adjust device current, or power, to achieve a minimum ĆTJ of +100ｰC.

1037

1027

(NOTE: If a failure occurs, resubmission shall be at the test conditions of the original

sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).

Option 1: 96 hours minimum sample size in accordance with table E-VIa of

MIL-PRF-19500, adjust TA or PD to achieve TJ = +275ｰC minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve

TJ = +225ｰC minimum.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic

failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a

failure is identified as wafer lot and wafer processing related, the entire wafer lot and related devices assembled from

the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failure mode has

been implemented and the devices from the wafer lot are screened to eliminate the failure mode.

Step

Method

Condition

Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve

1026

TJ = +150ｰC minimum using a minimum of PD = 75 percent of maximum rated PT as defined

in 1.3. n = 45 devices, c = 0.

Blocking life, TA = +150ｰC, VCB = 80 percent of rated voltage,

1048

48 hours minimum. n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200ｰC. n = 22, c = 0.

1032

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or

from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each

inspection lot. See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX,

and JANTXV) may be pulled prior to the application of final lead finish.