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MIL-PRF-19500-581 Semiconductor Device, Transistor, Npn, Silicon Amplifier, Types 2N4237, 2N4238, And 2N4239, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, amplifier transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


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MIL­PRF­19500/581C
TABLE I. Group A inspection.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
─┐
Visual and mechanical
2071
│
examination
│
│
Solderability 3/
2026
│
│
│
Resistance to solvents 3/ 4/
1022
├─ See MIL­PRF­19500
│
Temperature cycling
1051
│
(air to air) 3/
│
│
Hermetic seal
1071
│
│
Fine leak
│
Gross leak
─┘
Electrical measurements
See subgroup 2 of this table
Precondition TA = +250°C at
Bond strength (destructive
2037
t = 24 hrs or TA = +300°C at
bond pull test) 3/
t = 2 hrs, n = 11 wires, c = 0
Subgroup 2
°C/W
Thermal impedance
3131
See 4.3.1
ZθJX
V(BR)CEO
Breakdown voltage,
3011
Bias condition D, pulsed (see 4.5.1)
Vdc
IC = 100 mA dc
collector to emitter
2N4237
50
2N4238
80
2N4239
100
Bias condition A, VBE = 1.5 V dc
ICEX1
Collector to emitter
3041
100
nA dc
cutoff current
VCE = 50 V dc
2N4237
VCE = 80 V dc
2N4238
VCE = 100 V dc
2N4239
ICBO
Collector to base
3036
Bias condition D
100
nA dc
cutoff current
VCB = 50 V dc
2N4237
VCB = 80 V dc
2N4238
VCB = 100 V dc
2N4239
Bias condition D, VBE = 6 V dc
IEBO
Emitter to base
3061
0.5
mA dc
cutoff current
See footnotes at end of table.
8



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