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MIL-PRF-19500-581 Semiconductor Device, Transistor, Npn, Silicon Amplifier, Types 2N4237, 2N4238, And 2N4239, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, amplifier transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL­PRF­19500/581C
TABLE I. Group A inspection ­ Continued.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 2 ­ Continued
Pulsed (see 4.5.1), IC = 100 mA dc
hFE1
Forward- current transfer ratio
3076
30
VCE = 1.0 V dc
Pulsed (see 4.5.1), IC = 250 mA dc
hFE2
Forward-current transfer ratio
3076
30
150
VCE = 1.0 V dc
Pulsed (see 4.5.1), IC = 500 mA dc
hFE3
Forward-current transfer ratio
3076
30
VCE = 1.0 V dc
Pulsed (see 4.5.1), IC = 500 mA dc
VCE(sat)1
Saturation voltage and
3071
0.3
V dc
resistance, collector to emitter
IB = 50 mA dc
Pulsed (see 4.5.1), IC = 1.0 A dc
VCE(sat)2
Saturation voltage and
3071
0.6
V dc
resistance, collector to emitter
IB = 0.1 A dc
VBE(sat)1
Base emitter voltage
3066
Test condition A, pulsed (see 4.5.1),
1.0
V dc
IC = 500 mA dc, IB = 50 mA dc
(saturated)
VBE(sat)2
Base emitter voltage
3066
Test condition A, pulsed (see 4.5.1),
1.5
V dc
IC = 1.0 A dc, IB = 0.1 A dc
(saturated)
Subgroup 3
TA = +150°C
High-temperature operation:
µA dc
Bias condition A, VBE = 1.5 V dc
ICEX2
Collector to emitter
3041
25
cutoff current
VCE = 30 V dc
2N4237
VCE = 50 V dc
2N4238
VCE = 70 V dc
2N4239
TA = ­55°C
Low-temperature operation:
Pulsed (see 4.5.1), IC = 250 mA dc
hFE4
Forward-current transfer ratio
3076
15
VCE = 1.0 V dc
Subgroup 4
IC = 100 mA dc, VCE = 10 V dc,
|hFE |
Magnitude of small-signal,
3306
3
short-circuit forward-current
f = 10 MHz
transfer ratio
IE = 0, VCB = 10 V dc,
Cobo
Open­circuit output
3236
100
pF
capacitance
f = 100 kHz
See footnotes at end of table.
9



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