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MIL-PRF-19500-585 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6620 Through 1N6625, 1N6620U Through 1N6625U, 1N6620Us Through 1N6625Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/585K
4.5.3.1 Free air burn-in. The use of a current limiting or ballast resistor is permitted provided that each DUT still
sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is maintained through-out the
burn-in period. TJ = +115C minimum and +150C maximum for screening, and TJ = +125C minimum for 4.4.2.2
and 4.4.3.1 life tests. Accelerated life test in 4.4.2.1 shall be TJ = +150C minimum.
4.5.4 Scope display evaluation. Scope display evaluation shall be stable in accordance with method 4023 of
MIL-STD-750. Scope display may be performed on ATE (automatic test equipment) for screening only with the
approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a scope. Reverse
current (IBR) over the knee shall be 500 A peak.
4.5.5 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 4081
of MIL-STD-750 using the guidelines in that method for determining IM, IH, and tH. Measurement delay time tMD = 100
s max. See table E-IX of MIL-PRF-19500.
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