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MIL-PRF-19500-585 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6620 Through 1N6625, 1N6620U Through 1N6625U, 1N6620Us Through 1N6625Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


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MIL-PRF-19500/585K
TABLE I. Group A inspection.
Symbol
Limit
Unit
Inspection
1/
MIL-STD-750
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
C/W
Thermal impedance
3101
See 4.3.1
ZJX
Duty cycle 2 percent (pulsed) (see
VFM1
Forward voltage
4011
4.5.1); tp = 8.3 ms (max).
1N6620, U, US
IFM = 2.0 A dc
1.60
V
1N6621, U, US
IFM = 2.0 A dc
1.60
V
1N6622, U, US
IFM = 2.0 A dc
1.60
V
IFM = 1.5 A dc
1N6623, U, US
1.80
V
IFM = 1.5 A dc
1N6624, U, US
1.80
V
IFM = 1.5 A dc
1N6625, U, US
1.95
V
Duty cycle 2 percent (pulsed) (see
VFM2
Forward voltage
4011
4.5.1); tp = 8.3 ms (max).
1N6620, U, US
IFM = 1.2 A dc
1.40
V
IFM = 1.2 A dc
1N6621, U, US
1.40
V
IFM = 1.2 A dc
1N6622, U, US
1.40
V
IFM = 1.0 A dc
1N6623, U, US
1.55
V
IFM = 1.0 A dc
1N6624, U, US
1.55
V
IFM = 1.0 A dc
1N6625, U, US
1.75
V
A
IR1
Col. 2
Reverse current leakage
4016
VRM = column 2 (peak) of 1.3; pulsed
(see 4.5.1)
of 1.4
IR = 50 A dc; pulsed (see 4.5.1)
V
V(BR)1
110 percent
Breakdown voltage
4021
of col. 2 of
1.3
Subgroup 3
TA = +150C
High temperature
operation:
A
IR2
Col. 3
Reverse current leakage
4016
VRM = column 2 (peak); pulsed (see
4.5.1)
of 1.4
TA = -65C
Low-temperature
operation:
VFM3
110
Forward voltage
4011
IFM3 = 50 percent of IF(AV1) (pk) (col. 3
V
of 1.3); pulsed (see 4.5.1)
percent
of col. 6
of 1.4
IR = 50 A dc; pulsed (see 4.5.1)
V(BR2)
Col. 2
Breakdown voltage
4021
V
of 1.3
See footnote at end of table.
11



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