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MIL-PRF-19500-585 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6620 Through 1N6625, 1N6620U Through 1N6625U, 1N6620Us Through 1N6625Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/585K
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
MIL-STD-750
Sampling
plan
Method
Conditions
Subgroup 1
45 devices
c=0
Thermal shock
1056
20 cycles, condition D except low temperature shall be
achieved using liquid nitrogen (-195C). Visual for cracked
(glass strain)
glass.
500 cycles, -65C to +175C.
Temperature cycling
1051
Hermetic seal
1071
gross leak
Electrical measurement
See table I, subgroup 2 and table III herein steps 1 and 2.
22 devices
Subgroup 2
c=0
TA = +150C; t = 1,000 hours +65, -0 hours; dc = 80 - 85
Blocking life
1048
percent rated VR
Electrical measurement
See table I, subgroup 2.
Subgroup 4
N/A
Thermal impedance
See MIL-PRF-19500.
curves
Subgroup 5
22 devices
c=0
Barometric pressure
1001
1N6620 through 1N6622 at 8 mm Hg
(reduced) 1/
1N6623 through 1N6625 at 33 mm Hg
See footnotes at end of table.
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