MIL-PRF-19500-585 Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6620 Through 1N6625, 1N6620U Through 1N6625U, 1N6620Us Through 1N6625Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/585K

4.3 Screening (JANS, JANTX, AND JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Measurement

Screen (see table E-IV

of MIL-PRF-19500)

JANS level

JANTXV and JANTX level

(1) 3c

Thermal impedance (see 4.3.1)

Not applicable

Not required

Required IR1 and VFM1

Method 1038 of MIL-STD-750,

Method 1038 of MIL-STD-750, condition A

condition A

IR1 and VFM1, IR1  100 percent of initial reading

or 100 nA dc ( 200 nA dc for 1N6625), whichever IR1 and VFM1

is greater.  VFM1  0.05 V dc

Required, see 4.3.2

Subgroup 2 of table I herein:

Subgroups 2 and 3 of table I herein:

IR1  100 percent of initial reading or

IR1  100 percent of initial reading or 100 nA dc

100 nA dc (200 nA dc for 1N6625),

(200 nA dc for 1N6625), whichever is greater.

(2) 13

whichever is greater.

 VFM1  0.05 V dc. Scope display evaluation

 VFM1  0.05 V dc. Scope display

(see 4.5.4)

evaluation (see 4.5.4)

(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

(2) ZJX is not required in screen 13, if already previously performed.

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 as applicable of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor. See

table II, group E, subgroup 4 herein.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.3, 4.5.3.1) TA = +55�C

maximum. Test conditions in accordance with method 1038 of MIL-STD-750, condition B. Adjust IO to achieve the

required TJ. Use method 3100 of MIL-STD-750 to measure TJ. TJ = +115�C minimum and +150�C maximum.