INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/603J
shall be completed by 20 June 2013.
6 May 2013
SUPERSEDING
MIL-PRF-19500/603H
1 July 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
(TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON,
TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U,
JANTXVR, F, G, H; JANSR, F, G, AND H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each device
type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
RθJA
RθJC
Type
PT
PT
VDS
VDG
VGS
ID1
ID2 (3) (4)
IS
TA = +25°C
(3) (4) TC = +100°C
(2)
(1)
°C/W
°C/W
W
W
V dc
V dc
V dc
A dc
A dc
A dc
±20
2N7394, 2N7394U
150
4
35
0.83
60
60
35.0
30.0
35.0
±20
2N7268, 2N7268U
150
4
35
0.83
100
100
34.0
21.0
34.0
±20
2N7269, 2N7269U
150
4
35
0.83
200
200
26.0
16.0
26.0
2N7270, 2N7270U
150
4
35
0.83
500
500
11.0
7.0
11.0
±20
TJ and TSTG
VISO
Type
IDM
70,000 ft altitude
°C
A(pk)
V dc
2N7394, 2N7394U
140
-55 to +150
N/A
2N7268, 2N7268U
136
N/A
2N7269, 2N7269U
104
N/A
44
500
2N7270, 2N7270U
See notes next page.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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