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MIL-PRF-19500-603 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, And 2N7394U, Jantxvr, F, G, H; Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/603J
TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
°C/W
ZθJC
Thermal impedance 2/
See 4.3.3.
3161
Breakdown voltage, drain
3407
VGS = 0; ID = 1 mA dc
V(BR)DSS
to source
bias condition C
60
V dc
2N7394, 2N7394U
100
V dc
2N7268, 2N7268U
200
V dc
2N7269, 2N7269U
500
V dc
2N7270, 2N7270U
VDS ≥ VGS
Gate to source voltage
3403
2.0
4.0
V dc
VGS(TH)1
threshold
ID = 1 mA dc
Gate current
3411
+ 100
nA dc
VGS = +20 V dc, bias condition C,
IGSSF1
VDS = 0
Gate current
3411
- 100
nA dc
VGS = -20 V dc, bias condition C,
IGSSR1
VDS = 0
Drain current
3413
VGS = 0, bias condition C
IDSS1
VDS = 80 percent of rated VDS
µA dc
2N7394, 2N7394U
25
µA dc
2N7268, 2N7268U
25
µA dc
2N7269, 2N7269U
25
2N7270, 2N7270U
50
µA dc
Static drain to source on-
3421
VGS = 12 V dc, condition A
rDS(on)1
state resistance
pulsed (see 4.5.1), ID = ID2
2N7394, 2N7394U
0.027
ohm
2N7268, 2N7268U
0.065
ohm
2N7269, 2N7269U
0.100
ohm
2N7270, 2N7270U
0.450
ohm
Static drain to source on-
3421
VGS = 12 V dc, condition A
rDS(on)2
state resistance
pulsed (see 4.5.1), ID = ID1
2N7394, 2N7394U
0.030
ohm
2N7268, 2N7268U
0.070
ohm
2N7269, 2N7269U
0.110
ohm
2N7270, 2N7270U
0.500
ohm
Forward voltage
4011
Pulsed (see 4.5.1), ID = ID1
VSD
VGS = 0 V dc
2N7394, 2N7394U
1.4
V
2N7268, 2N7268U
1.4
V
2N7269, 2N7269U
1.4
V
2N7270, 2N7270U
1.6
V
See footnotes at end of table.
12



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