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MIL-PRF-19500-603 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, And 2N7394U, Jantxvr, F, G, H; Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/603J
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4.3 Screening (JANTXV and JANS levels only). Screening shall be in accordance with appendix E, table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
Measurement
JANS level
JANTXV levels
(1) (2)
(3)
Gate stress test (see 4.3.1).
Gate stress test (see 4.3.1).
(3)
Single pulse avalanche energy test, method
Single pulse avalanche energy test, method 3470
3470 of MIL-STD-750 (see 4.3.2).
(3) 3c
Method 3161 of MIL-STD-750 (see 4.3.3).
Method 3161 of MIL-STD-750 (see 4.3.3).
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Subgroup 2 of table I herein. IGSSF1,
Subgroup 2 of table I herein.
IGSSR1, IDSS1.
10
Method 1042 of MIL-STD-750, test condition B
Method 1042 of MIL-STD-750, test condition B
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IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1
Subgroup 2 of table I herein
Subgroup 2 of table I herein.
ĆIGSSF1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
ĆIGSSR1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
ĆIDSS1 = ± 10 µA dc or ± 100 percent of
initial value, whichever is greater.
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Method 1042 of MIL-STD-750, test condition A.
Method 1042 of MIL-STD-750, test condition A.
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Subgroups 2 and 3 of table I herein
Subgroup 2 of table I herein
ĆIGSSF1 = ± 20 nA dc or ± 100 percent of
ĆIGSSF1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIGSSR1 = ± 20 nA dc or ± 100 percent of
ĆIGSSR1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIDSS1 = ± 10 µA dc or ± 100 percent of
ĆIDSS1 = ± 10 µA dc or ± 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆrDS(on)1 =± 20 percent of initial value
ĆrDS(on)1 =± 20 percent of initial value
ĆVGS(th)1 = ± 20 percent of initial value.
ĆVGS(th)1 = ± 20 percent of initial value.
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Method 1081 of MIL-STD-750 (see 4.3.4),
Method 1081 of MIL-STD-750 (see 4.3.4),
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Endpoints: Subgroup 2 of table I herein. (Not
Endpoints: Subgroup 2 of table I herein.
applicable for TO-276AB surface mount
(Not applicable for TO-276AB surface mount
devices).
devices).
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
(3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level does not need to be repeated in
screening requirements.
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