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MIL-PRF-19500-603 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, And 2N7394U, Jantxvr, F, G, H; Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/603J
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued
Rise time
tr
2N7394, 2N7394U
100
ns
2N7268, 2N7268U
190
ns
2N7269, 2N7269U
140
ns
2N7270, 2N7270U
190
ns
td(off)
Turn-off delay time
2N7394, 2N7394U
75
ns
2N7268, 2N7268U
170
ns
2N7269, 2N7269U
140
ns
2N7270, 2N7270U
190
ns
tf
Fall time
2N7394, 2N7394U
75
ns
ns
2N7268, 2N7268U
130
ns
140
2N7269, 2N7269U
ns
130
2N7270, 2N7270U
Subgroup 5
Safe operating area
3474
test (high voltage)
tp = 10 ms minimum
VDS = 80 percent of maximum rated
VDS, (VDS ≤ 200)
Electrical measurements
See table I, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
Qg(on)
2N7394, 2N7394U
200
nC
2N7268, 2N7268U
160
nC
2N7269, 2N7269U
170
nC
2N7270, 2N7270U
150
nC
See footnotes at end of table.
14



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