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MIL-PRF-19500-603 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, And 2N7394U, Jantxvr, F, G, H; Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/603J
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
± 200
Gate current
3411
nA dc
VGS = +20 and -20 V dc
IGSS2
bias condition C, VDS = 0
Drain current
3413
VGS = 0; bias condition C
1.0
mA dc
IDSS2
VDS = 100 percent of rated VDS
0.25
mA dc
IDSS3
VDS = 80 percent of rated VDS
Static drain to source
3421
VGS = 12 V dc
rDS(on)3
on-state resistance
pulsed (see 4.5.1), ID = ID2
2N7394, 2N7394U
0.060
ohm
2N7268, 2N7268U
0.132
ohm
2N7269, 2N7269U
0.200
ohm
2N7270, 2N7270U
1.000
ohm
VDS ≥ VGS, ID = 1 mA dc
Gate to source voltage
3404
1.0
V dc
VGS(TH)2
(threshold)
Low temperature
TC = TJ = -55°C
operation:
VDS ≥ VGS, ID = 1 mA dc
Gate to source voltage
3404
5.0
V dc
VGS(TH)3
(threshold)
Subgroup 4
Forward transconductance
3475
ID = rated ID2, VDD = 15 V
gFS
(see 4.5.1)
2N7394, 2N7394U
12
S
2N7268, 2N7268U
8
S
2N7269, 2N7269U
8
S
2N7270, 2N7270U
4
S
Switching time test
3472
ID = ID1, VGS = 12 V dc
RG = 2.35Ω, VDD = 50 percent of
rated VDS
Turn-on delay time
td(on)
2N7394, 2N7394U
27
ns
2N7268, 2N7268U
45
ns
2N7269, 2N7269U
33
ns
2N7270, 2N7270U
45
ns
See footnotes at end of table.
13



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