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MIL-PRF-19500-603 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, And 2N7394U, Jantxvr, F, G, H; Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/603J

TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.

Qualification and

MIL-STD-750

Inspection

large lot quality

conformance

Method

Conditions

inspection

Subgroup 1

45 devices

c=0

Thermal shock

1051

Test condition G.

(temperature cycling)

Hermetic seal

1071

As applicable.

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2.

Subgroup 2 1/

45 devices

c=0

Steady-state gate bias

1042

Condition B, 1,000 hours.

Electrical measurements

See table I, subgroup 2.

Steady-state reverse bias

1042

Condition A, 1,000 hours.

Electrical measurements

See table I, subgroup 2.

Subgroup 4

Sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 5

3 devices

c=0

Test condition C. For device type

Barometric pressure

1001

2N7270, 2N7270U: VDS = 500 V; I(ISO)

(2N7270, 2N7270U only)

< 0.25 mA.

Subgroup 10

22 devices

c=0

Commutating diode for safe

3476

Test conditions shall be derived by the

operating area test procedure for

manufacturer.

measuring dv/dt during reverse

recovery of power MOSFET

transistors or insulated gate

bipolar transistors

A separate sample may be pulled for each test condition.