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MIL-PRF-19500-606 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/606B
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Units
Conditions
Min
Max
Metho
d
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
Breakdown voltage,
3407
VGS = 0 V; ID = 1 mA dc,
V(BR)DSS
drain to source
bias condition C
2N7291
100
V dc
2N7293
200
V dc
2N7295
250
V dc
2N7297
500
V dc
VDG ≥ VGS,
2.0
4.0
V dc
Gate to source
VGS(th)1
3403
voltage (threshold)
ID = 1 mA dc
Gate current
3411
VGS = +20 V dc, bias
IGSSF1
+100
nA dc
*
condition C, VDS = 0
IGSSR1
*
Gate current
3411
VGS = -20 V dc, bias condition
-100
nA dc
C, VDS = 0
µA dc
25
Drain current
3413
VGS = 0 V dc, bias condition
IDSS1
C, VDS = 80 percent of rated
VDS
rDS(on)1
Static drain to source
3421
VGS = 10 V dc, condition A,
pulsed (see 4.5.1), ID = ID2
on-state resistance
Ω
2N7291
0.055
Ω
2N7293
0.10
Ω
2N7295
0.17
Ω
2N7297
0.60
Static drain to source
3421
VGS = 10 V dc, condition A,
rDS(on)2
on-state resistance
pulsed (see 4.5.1), ID = ID1
Ω
2N7291
0.058
Ω
2N7293
0.105
Ω
2N7295
0.179
Ω
2N7297
0.630
VSD
Forward voltage
4011
Pulsed (see 4.5.1), Id = Id1,
1.8
V dc
VGS = 0 V dc
See footnote at end of table.
10



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