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MIL-PRF-19500-606 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/606B
TABLE II. Group D inspection.
MIL-STD-750
Preirradiation limits
Preirradiation limits
Inspection 1/
Symbol
Units
Method
Conditions
M, D, and R
M, D, and R
Min
Max
Min
Max
Subgroup 1
Not applicable
TC = +25�C
Subgroup 2
Steady state total
1019
2/ 3/
dose irradiation
End-point electricals
Breakdown voltage,
VBR(DSS)
3407
VGS = 0; ID = 1 mA;
drain to source
bias condition C
2N7291
100
100
V dc
2N7293
200
200
V dc
2N7295
250
250
V dc
2N7297
500
500
V dc
VDS ≥ VGS, ID = 1 mA
VGS(th)1
Gate to source
3403
voltage (threshold)
2N7291
2.0
4.0
2.0
4.0
V dc
2N7293
2.0
4.0
2.0
4.0
V dc
2N7295
2.0
4.0
2.0
4.0
V dc
2N7297
2.0
4.0
2.0
4.0
V dc
IGSSF1
Gate current
100
3411
100
nA dc
VGS = 20 V; VDS = 0,
bias condition C
IGSSR1
Gate current
-100
3411
-100
nA dc
VGS = 20 V; VDS = 0,
bias condition C
IDSS1
Drain current
3413
VGS = 0,
bias condition C
VDS = 80 percent of rated
VDS (preirradiation)
�A dc
2N7291
25
25
�A dc
2N7293
25
25
�A dc
2N7295
25
25
2N7297
25
25
�A dc
See footnotes at end of table.
14



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