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MIL-PRF-19500-606 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/606B
TABLE II. Group D inspection.
MIL-STD-750
Preirradiation limits
Preirradiation limits
Inspection 1/
Symbol
Units
Method
Conditions
M, D, and R
M, D, and R
Min
Max
Min
Max
Subgroup 1
Not applicable
TC = +25°C
Subgroup 2
Steady state total
1019
2/ 3/
dose irradiation
End-point electricals
Breakdown voltage,
VBR(DSS)
3407
VGS = 0; ID = 1 mA;
drain to source
bias condition C
2N7291
100
100
V dc
2N7293
200
200
V dc
2N7295
250
250
V dc
2N7297
500
500
V dc
VDS ≥ VGS, ID = 1 mA
VGS(th)1
Gate to source
3403
voltage (threshold)
2N7291
2.0
4.0
2.0
4.0
V dc
2N7293
2.0
4.0
2.0
4.0
V dc
2N7295
2.0
4.0
2.0
4.0
V dc
2N7297
2.0
4.0
2.0
4.0
V dc
IGSSF1
Gate current
100
3411
100
nA dc
VGS = 20 V; VDS = 0,
bias condition C
IGSSR1
Gate current
-100
3411
-100
nA dc
VGS = 20 V; VDS = 0,
bias condition C
IDSS1
Drain current
3413
VGS = 0,
bias condition C
VDS = 80 percent of rated
VDS (preirradiation)
µA dc
2N7291
25
25
µA dc
2N7293
25
25
µA dc
2N7295
25
25
2N7297
25
25
µA dc
See footnotes at end of table.
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