For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-606 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


img
MIL-PRF-19500/606B
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Units
Method
Conditions
Min
Max
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
± 200
IGSS2
nA dc
Gate current
3411
VGS = +20 V dc and -20 V dc,
bias condition C, VDS = 0
Drain current
3413
VGS = 0 V dc, bias condition C,
VDS = 100 percent of rated VDS
IDSS2
1.0
mA dc
VDS = 80 percent of rated VDS
IDSS3
0.25
mA dc
rDS(on)3
Static drain to source
3421
VGS = 10 V dc, pulsed
(see 4.5.1), ID = ID2
on-state resistance
Ω
2N7291
0.110
Ω
2N7293
0.220
Ω
2N7295
0.408
Ω
2N7297
1.56
VDS ≥ VGS, ID = 1 mA dc
VGS(th)2
Gate to source
1.0
V dc
3403
voltage (threshold)
TC = TJ = -55°C
Low temperature
operation:
VDS ≥ VGS, ID = 1 mA dc
Gate to source voltage
3403
VGS(th)3
5.0
V dc
(threshold)
Subgroup 4
Switching time test
3472
ID = ID1, VGS = 10 V dc,
RG = 25Ω, VDD = 50 percent
of rated VDS
Turn-on delay time
td(on)
2N7291
170
ns
2N7293
170
ns
2N7295
150
ns
2N7297
160
ns
Rise time
tr
2N7291
1,120
ns
2N7293
600
ns
2N7295
450
ns
2N7297
260
ns
See footnote at end of table.
11



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.