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MIL-PRF-19500-606 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/606B
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Units
Method
Conditions
Min
Max
Subgroup 4 - Continued
Turn-off delay time
td(off)
2N7291
420
ns
2N7293
580
ns
2N7295
650
ns
2N7297
750
ns
Fall time
tf
2N7291
380
ns
2N7293
300
ns
2N7295
260
ns
2N7297
180
ns
Subgroup 5
Safe operating area test
3474
See figure 4, tp = 10 ms
minimum, VDS = 80 percent
of max rated VDS (VDS ≤
200)
Electrical measurements
See table IV, steps 1, 2, 3,
4, 5, 6, and 7
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
VDD = 0.5 B, VDSS, ID = ID1
Qg(on)
On-state gate charge
VGS ≤ 20V, IGS1 = IGS2
2N7291
230
nC
2N7293
244
nC
2N7295
252
nC
2N7297
258
nC
See footnote at end of table.
12



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