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MIL-PRF-19500-606 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/606B
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161
of MIL-STD-750. The maximum limit of RθJC(max) = 0.83°C/W. The following parameter measurements shall apply.
Measuring current (IM) .......................................... 10 mA.
a.
b.
Drain heating current (IH) ..................................... 4 A.
Heating time (tH) ................................................... Steady-state (see method 3161 of MIL-STD-750 for
c.
definition).
Drain-source heating voltage (VH) ........................ 25 V.
d.
Measurement time delay (tMD) .............................. 30 to 60 µs.
e.
Sample window time (tSW) ..................................... 10 µs maximum.
f.
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