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MIL-PRF-19500-606 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Only\) Transistors, N-Channel, Silicon, Types 2N7291, 2N7293, 2N7295, And 2N7297, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened \(total dose only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/606B
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Units
Method
Conditions
Min
Max
Subgroup 7 - Continued
Qgs
Gate to source charge
63
2N7291
nC
53
2N7293
nC
48
2N7295
nC
34
2N7297
nC
Qgd
Gate to drain charge
123
2N7291
nC
125
2N7293
nC
126
2N7295
nC
123
2N7297
nC
di/dt = 100 A/µs,
Trr
Reverse recovery time
3473
VDD ≤ 30 V, Id = Id1
1,400
2N7291
ns
1,700
2N7293
ns
2,000
2N7295
ns
2,300
2N7297
ns
1/ For sampling plan, see MIL-PRF-19500.
13



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