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MIL-PRF-19500-608 Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660Cct1, 1N6660R, 1N6660Cat1, And 1N6660Dt1, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/608D

TABLE I. Group A inspection. 1/ 2/

MIL-STD-750

Limit

Inspection

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

ZΘJC

Thermal impedance

3101

See 4.3.2

�C/W

1N6660CAT1, 1N6660DT1 (die 1)

1N6660CCT1, 1N6660DT1 (die 2)

Forward voltage

4011

IF = 5 A (pk) pulsed (see 4.5.1)

VF1

0.55

V dc

0.75

V dc

IF = 15 A (pk) pulsed (see 4.5.1)

VF2

1.0

V dc

IF = 30 A (pk) pulsed (see 4.5.1)

VF3

Reverse current

4016

DC method, VR = 45 V dc,

IR1

1.0

mA dc

pulsed (see 4.5.1)

Subgroup 3

TA = +125�C

High temperature

operation:

4016

IR2

Reverse current

DC method, VR = 45 V dc,

mA dc

Leakage

pulsed (see 4.5.1)

TA = -55�C

Low temperature

operation:

4011

Forward voltage

VF4

IF = 15 A (pk) pulsed (see 4.5.1)

V dc

0.8

Subgroup 4

Junction capacitance

4001

VR = 5 V dc; f = 1 MHz;

2,000

VSIG = 50 mV (p-p) (max)

Subgroup 6

Surge

4066

IFSM = 300 A (pk), 8.3 ms;

pulsed (see 4.5.1)

Electrical measurements

See table I, subgroup 2 herein

Subgroup 7 3/

�A

Dielectric withstanding voltage

1016

VR = 500 V dc; all leads shorted;

DWV

V as measured from leads to case

Electrical measurements

See table I, subgroup 2 herein.

1/ For sampling plan, see MIL-PRF-19500.

2/ Each individual diode.