MIL-PRF-19500-608 Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660Cct1, 1N6660R, 1N6660Cat1, And 1N6660Dt1, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/608D

* TABLE II. Groups A, B, C, and E electrical end-point and delta measurements. 1/ 2/ 3/ 4/ 5/

MIL-STD-750

Limits

Step

Inspection

Symbol

Unit

Method

Conditions

Min

Max

ĆVF1

IF = 5 A (pk),

Forward voltage

4011

�50 mV dc from initial

pulsed (see 4.5.1)

reading.

ĆIR1

VR = 45 V dc,

Reverse current

4016

�25 �A dc or 100 percent

pulsed (see 4.5.1),

from initial reading,

dc method

whichever is greater.

�C/W

ZΘJC

Thermal impedance

3101

See 4.3.2

1N6660CAT1, 1N6660DT1 (die 1)

1N6660CCT1, 1N6660DT1 (die 2)

1/ Each individual diode.

2/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table II herein, steps 1 and 2.

b. Subgroup 4, see table II herein, steps 1, 2, 3, 4, and 5.

c. Subgroup 5, see table II herein, steps 1, 2, 3, and 4.

3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table II herein, steps 1 and 2.

b. Subgroup 3, see table II herein, steps 1, 2, and 5.

c. Subgroup 6, see table II herein, steps 1 and 2.

4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows:

a. Subgroups 2 and 3, see table II herein, steps 1 and 2.

b. Subgroup 6, see table II herein, steps 1, 2, and 5.

5/ Devices which exceed the table I, limits for this test shall not be accepted.