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MIL-PRF-19500-608 Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660Cct1, 1N6660R, 1N6660Cat1, And 1N6660Dt1, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/608D
TABLE III. Group E inspection (all quality levels) for qualification and requalification only.
MIL-STD-750
Qualification
Inspection
Conditions
Method
Subgroup 1
Ttemperature cycling
n = 38, c = 0
1051
500 cycles
Hermetic seal
Electrical measurements
1071
See table II, steps 1 and 2
Subgroup 2
t = 1,000 hours, TC = +125°C; VR = 36 V dc
Steady-state blocking life
1048
n = 38, c = 0
Electrical measurements
See table II, steps 1, 2, and 3
Subgroup 3
Not applicable
Subgroup 4
Thermal impedance curves
3101
See MIL-PRF-19500
Subgroup 6
ESD
1020
n = 3, c = 0
Subgroup 10 1/
Condition A; TA = +25°C; IFSM = 300 A, 100 surges
Surge
4066
n = 22, c = 0
Electrical measurements
See table II, steps 1 and 2
1/ For each diode.
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