INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/612E
shall be completed by 24 July 2014.
24 April 2014
SUPERSEDING
MIL-PRF-19500/612D
28 October 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,
TYPE 2N7372, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power switching applications. Four levels of product assurance are provided as specified in
1.2 Physical dimensions. See figure 1 (TO-254AA).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
*
Type
VCBO
PT (1)
PT (2)
VCEO
VEBO
IC
IC
TJ and TSTG
RθJA
RθJC
TA = +25°C
TC = +25°C
(3)
°C/W
°C/W
°C
W
W
V dc
V dc
V dc
A dc
A dc
2N7372
4
58
100
80
5.5
5.0
10
43.75
3
-65 to +200
(1) Derate linearly 22.8 mW/°C for TA > +25°C.
(2) Derate linearly 331 mW/°C for TC > +25°C.
(3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1 percent.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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