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MIL-PRF-19500-612 Semiconductor Device, Transistor, Pnp, Silicon, Power, Type 2N7372, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500.

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MIL-PRF-19500/612E
*  4.3 Screening ( JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein.
Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
JANS level
JANTX and JANTXV levels
(1) 3c
Thermal impedance (see 4.3.1)
Thermal impedance (see 4.3.1)
9
Not applicable
ICES1 and hFE2
11
Subgroup 2 of table I herein;
ICES1 and hFE2
ICES1 and hFE2; ĆICES1 = 100 percent of initial
value or 100 nA dc whichever is greater.
ĆhFE2 = ± 20 percent of initial value.
See 4.3.2
t = 80 hours minimum See 4.3.2
12
13
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ICES1 and hFE2;
ICES1 and hFE2;
ĆICES1 = 100 percent of initial value
ĆICES1 = 100 percent of initial value
or 100 nA dc, whichever is greater.
or 100 nA dc, whichever is greater.
ĆhFE2 = ± 20 percent of initial value.
ĆhFE2 = ± 20 percent of initial value.
*
17
Method 1081 of MIL-STD-750 (see 4.3.3).
Method 1081 of MIL-STD-750 (see 4.3.3).
End-points: Subgroup 2 of table I herein.
End-points: Subgroup 2 of table I herein.
* (1)
Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to
be repeated in screening requirements.
4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: TJ = 187.5 ±12.5°C, VCE = 30 V dc
±10 V dc, TA = room ambient as defined in the general requirements, 4.5 of MIL-STD-750.
*
4.3.3 Dielectric withstanding voltage.
a.
Magnitude of test voltage ......................................... 900 V dc.
b.
Duration of application of test voltage....................... 15 seconds (min).
c.
Points of application of test voltage .......................... All leads to case (bunch connection).
d.
Method of connection ............................................... Mechanical.
e.
Kilovolt-ampere rating of high voltage source........... 1,200 V/1.0 mA (min).
f.
Maximum leakage current ........................................ 1.0 mA.
g.
Voltage ramp up time ............................................... 500 V/second.
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