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MIL-PRF-19500-612 Semiconductor Device, Transistor, Pnp, Silicon, Power, Type 2N7372, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500.

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MIL-PRF-19500/612E

TABLE I. Group A inspection.

Inspection 1/

Symbol

Limits

Unit

MIL-STD-750

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

�C/W

Thermal impedance 2/

3131

See 4.3.1

ZθJC

Collector to emitter

3011

Bias condition D; IC = 100 mA

V(BR)CEO

V dc

breakdown voltage

dc; IB = 0; Pulsed (see. 4.5.1)

�A dc

Collector to emitter

3041

Bias condition C; VCE = 60 V

ICES1

1.0

cutoff current

dc; VBE = 0

Collector to emitter

3041

Bias condition C; VCE = 100 V

ICES2

1.0

mA dc

cutoff current

dc; VBE = 0

�A dc

Collector to emitter

3041

Bias condition D;VCE = 40 V

ICEO

cutoff current

dc; IB = 0

�A dc

Emitter to base

3061

Bias condition D;VEB = 4 dc;

IEBO1

1.0

cutoff current

IC = 0

Emitter to base

3061

Bias condition D; VEB = 5.5

IEBO2

1.0

mA dc

cutoff current

dc; IC = 0

Forward-current

3076

VCE = 5.0 V dc; IC = 50 mA

hFE1

transfer ratio

dc; pulsed (see 4.5.1)

Forward-current

3076

VCE = 5.0 V dc; IC = 2.5 A dc;

hFE2

200

transfer ratio

pulsed (see 4.5.1)

Forward-current

3076

VCE = 5.0 V dc; IC = 5.0 A dc;

hFE3

transfer ratio

pulsed (see 4.5.1)

Base to emitter

3066

Test condition B; VCE = 5.0 V

VBE

1.45

V dc

non-saturated voltage

dc, IC = 2.5 A dc, Pulsed (see

4.5.1)

Base to emitter

3066

Test condition A; IC = 2.5 A dc

VBE(SAT)1

1.45

V dc

saturated voltage

IB = 250 mA dc, pulsed (see

4.5.1)

See footnote at end of table.