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MIL-PRF-19500-612 Semiconductor Device, Transistor, Pnp, Silicon, Power, Type 2N7372, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500.

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MIL-PRF-19500/612E
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
4.5.2 Group B accelerated life test. This test shall be conducted using one of the two options listed below with the
following conditions applying to all options: VCB = 20 V minimum dc; TJ = +275°C.
a. PT = 2.5; PT adjusted to give a lot average of TJ = +275°C with TA = +125°C ±25°C.
b. TA = +25°C ±3°C with PT adjusted to give a lot average of TJ = +275°C.
4.5.3 Inspection conditions. Unless otherwise specified in MIL-PRF-19500 or herein, all inspections shall be
conducted at a case temperature (TC) of +25°C ±3°C.
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