MIL-PRF-19500-612 Semiconductor Device, Transistor, Pnp, Silicon, Power, Type 2N7372, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500.

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MIL-PRF-19500/612E

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract

award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be

as specified on figure 1. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that

contain a minimum of 90 percent AL2O3 (ceramic). Examples of such construction techniques are metallized ceramic

eyelets or ceramic walled packages.

3.4.1 Lead finish and formation. Lead finish shall be solderable in accordance with MIL-STD-750,

MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition

requirements (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent

hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100 percent dc testing in accordance with table I,

subgroup 2 herein.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3)

c. Conformance inspection (see 4.4 and table I).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case

qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II

tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first

inspection lot of this revision to maintain qualification.