MIL-PRF-19500-612 Semiconductor Device, Transistor, Pnp, Silicon, Power, Type 2N7372, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500.

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MIL-PRF-19500/612E

TABLE I. Group A inspection - Continued.

Inspection 1/

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 5

Safe operating area

3055

Pre pulse condition for each test:

VCE = 0, IC = 0 TC = +25�C

(continuous dc)

Pulse condition for each test:

t p = 1 second, 1 cycle

TC = +25�C (see figure 2)

Test 1

VCE = 12 V dc, IC = 5 A dc

Test 2

VCE = 32 V dc, IC = 1.5 A dc

Test 3

VCE = 80 V dc, IC = 100 mA dc

TC = +25�C; RBB1 = 10 ohms;

Safe operating area

3053

(unclamped inductive)

RBB2 = 100 ohms; L = 0.3 mH

RL = 0.1 ohms; VCC = 10 V dc

VBB1 = 10 V dc; VBB2 = 4 V dc

ICM = 10 A dc (see figure 3)

Electrical

Table I, subgroup 2

measurements

Subgroups 6 and 7

Not applicable.

1/ For sampling plan, see MIL-PRF-19500.

2/ This test required for the following end-point measurement only:

Group B, subgroups 3, 4, and 5 (JANS).

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroups 2 and 6.

Group E, subgroup 1.