INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/616G
shall be completed by 17 July 2009.
17 April 2009
SUPERSEDING
MIL-PRF-19500/616F
27 March 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,
COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659
AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power
rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254AA isolated).
1.3 Maximum ratings. (for each leg).
IFSM (1)
IF
trr
RJC
RJA
TSTG and TJ
Types
VRWM
TC = 100C
tp = 8.3 ms
(1)
(1)
(1)
(1) (2) (3)
C/W
C/W
C
A dc
ns
A (pk)
V dc
100
1N6657, 1N6657R
150
150
15
35
2.3
40
-65 to +200
1N6658, 1N6658R
200
1N6659, 1N6659R
(1) Each individual diode.
(2) Derate linearly at 300 mA/C from +100C to +150C.
(3) Total package current is limited to 30A dc.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil.
AMSC N/A
FSC 5961
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