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MIL-PRF-19500-616 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6657 Through 1N6659 And 1N6657R Through 1N6659R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/616G
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
C/W
Thermal impedance
3101
See 4.3.2
ZJX
IR = 500 A dc; pulsed (see 4.5.1)
Breakdown voltage
4022
VBR
V dc
100
1N6657, 1N6657R
150
1N6658, 1N6658R
200
1N6659, 1N6659R
Forward voltage
4011
IF = 10 A (pk); pulsed (see 4.5.1)
VF1
1.0
V dc
IF = 20 A (pk); pulsed (see 4.5.1)
VF2
1.2
V dc
A dc
Reverse current
4016
DC method; VR = rated VR, (see 1.3);
IR1
10
leakage
pulsed (see 4.5.1)
Subgroup 3
TC = +100C
High temperature
operation
Reverse current
4016
DC method; VR = rated VR (see 1.3);
IR2
1.0
mA dc
leakage
pulsed (see 4.5.1)
TA = -65C
Low temperature
operation:
Forward voltage
4011
IF = 10 A (pk); pulsed (see 4.5.1)
VF3
1.15
V dc
Subgroup 4
Scope display
evaluation 2/
Reverse recovery time
4031
Condition B; IF = 1A dc, IR = 1 A,
trr
35
ns
IRR = 100 mA
Junction capacitance
4001
VR = 10 V dc, f = 1 mHz,
CJ
150
VSIG = 50 mV (p-p) (max)
Subgroup 5
Not applicable
See footnotes at end of table.
7



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