MIL-PRF-19500-616 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6657 Through 1N6659 And 1N6657R Through 1N6659R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/616G

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Sampling plan

Method

Conditions

Subgroup 1

22 devices

c=0

500 cycles, condition C, - 55C to +175C.

Temperature cycling

1051

Hermetic seal

1071

Electrical measurements

See table I, subgroup 2 and table III, steps 1 and 2. For

irradiated devices, include trr as an end-point measurement.

22 devices

Subgroup 2

c=0

1,000 hours, VR = 80 percent of VRated.

1048

Blocking life

Electrical measurements

See table I, subgroup 2 herein, except for thermal impedance

and table III, steps 1 and 2. For irradiated devices, include trr

as an end-point measurement.

Sample size

Subgroup 4

N/A

See MIL-PRF-19500.

Thermal impedance curves

Subgroup 5

22 devices

c=0

1001

Barometric pressure,

VR = rated VR (see 1.3); pressure = 33 mm Hg; t = 1 minute

reduced (altitude

(minimum), RISO = 2.0 x 10 ohm minimum. IR = IR1

operation)

3 devices

Subgroup 6

c=0

1020

ESD

22 devices

Subgroup 8

c=0

4066

Forward surge

See table I, subgroup 2 herein.

Electrical measurements