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MIL-PRF-19500-616 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6657 Through 1N6659 And 1N6657R Through 1N6659R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/616G
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.535
.545
13.59
13.84
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.530
.550
13.46
13.97
LO
.150 BSC
3.81 BSC
LS
.150 BSC
3.81 BSC
MHD
.139
.149
3.53
3.78
MHO
.665
.685
16.89
17.40
TL
.790
.800
20.07
20.32
TT
.040
.050
1.02
1.27
SCHEMATIC
TW
.535
.545
13.59
13.84
1N6657, 1N6658, 1N6659
TERM 1 = ANODE 1
TERM 2 = CATHODE
TERM 3 = ANODE 2
1N6657R, 1N6658R, 1N6659R
TERM 1 = CATHODE 1
TERM 2 = ANODE
TERM 3 = CATHODE 2
NOTES:
1.  Dimensions are in inches.
2.  Millimeter equivalents are given for general information only.
3.  All terminals are isolated from case.
4.  In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
FIGURE 1. Dimensions and configuration (TO-254AA).
2



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